SILICON CARBIDE

Material

Silicon carbide (SiC) is a next generation semiconductor material with the potential to revolutionize the power semiconductor industry, which is driven by fast growth in demand for energy-efficient high-performance power electronic systems.

Silicon carbide possesses unique material properties making it:

  • Withstand 10x higher voltages than conventional silicon,
  • Hard as diamond,
  • Have the same conductivity as copper, and
  • Radiation hard.

Benefits

These properties allows the creation of superior semiconductor devices by use of SiC. Compared to conventional silicon devices, SiC devices are able to:

  • Reduce energy losses,
  • Handle very high currents and voltages,
  • Fit for high frequency operation,
  • Sustain high temperatures, and
  • Be smaller and lighter than silicon devices.

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General issues with SiC power devices

SiC power devices are used in many applications but device reliability in higher voltage classes is still not satisfactory. Bipolar degradation is a cause of device failure.

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