THE SiC POWER ELECTRIC SOLUTION:

NEXT GENERATION 8-INCH SILICON CARBIDE WAFERS

Made in Sweden to meet the ever-increasing global demands for high quality Silicon Carbide (SiC) material.

Enabling the next generation of high-voltage power devices with BPD defect-free 8-inch SiC wafers.

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Understand Industrial Relevance

PROPRIETARY FSGP-M CRYSTAL GROWTH TECHNOLOGY

BPD-FREE HIGH QUALITY WAFERS

ROOTED IN SWEDISH SEMICONDUCTOR EXPERTISE

INDUSTRIAL RELEVANCE

From Upstream Wafer to Downstream Performance

Wafer quality defines device reliability:

Discover how KISAB’s 8-inch SiC wafers sit upstream in the value chain to enable high-efficiency EV mobility, advanced AI data centers, and renewable grid infrastructure.

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8-Inch SiC Wafers

Discover our n-type SiC substrates and access technical specifications.

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THE KISAB ADVANTAGE

FSGP-M

Learn how our Fast Sublimation Growth Process solves substrate-quality bottlenecks like Basal Plane Dislocations (BPD).

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Contact us for any enquiry

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Kiselkarbid i Stockholm AB (“KISAB”) is a silicon carbide semiconductor material development and production company with operations in the tech hub of Sweden just north of Stockholm: Kista.

IMPORTANT LINKS

CONTACT DETAILS

Kistagången 16, Box 228,
SE16440 Kista, SWEDEN