Kiselkarbid i Stockholm AB (“KISAB”) is a silicon carbide semiconductor material development and production company with operations in the tech hub of Sweden just north of Stockholm: Kista.
The Fast Sublimation Growth Process – Monocrystalline (FSGP-M) system was developed to meet the stringent requirements with respect to doping concentration control, planar defects and point defects of fluorescent SiC material.
FSGP-M distinguishes itself from Physical Vapor Transport (PVT) by:
- Step flow growth being the dominant growth mechanism during the whole growth session and over the whole substrate
- Direct molecular transport (DMT) for supply of growth species
- Growth at lower temperature
Features Of Material Grown Using FSGP-M
Geometry
- Diameter: 200 mm
- Polytype: 4H
- Orientation: 4o
- Edge exclusion: 3mm
- Bow: <10 µm
- Warp: <25 µm
- TTV : <4 µm
- A mirror-like growth with no macro steps (RMS< 0.9nm)
Resistivity, doping & stress
- Resistivity: 19.5 – 20.5 mΩcm
- Resistivity uniformity: <2%
- Doping uniformity: <2%
- Residual stress: Nearly none
Large size surface anomalies
- Stains: None
- Scratches: None
- Cracks: None
- Edge chips: None
Large crystallographic defects
- Foreign polytypes: None
- Striations: None
- Carbon inclusions: None
- Silicon droplets: None
- Hex plates: None
- Star defects: None
- Triangular defects: None
- Carrot defects: None
Dislocations
- MP: <2/wafer
- BPD: <70/wafer
- BSF: None
- TSD: <100 cm-2
- TED: <800 cm-2
- Etch pit density: <1'000 cm-2
Other
- Narrow rocking curve: full width at half maximum (FWHM) value of <12arcsec
- No downfalls
BPD Free
Our wafers are free of Basal Plane Dislocations (BPDs), which enables device makers to avoid bipolar degradation and possible device failure.
