Kiselkarbid i Stockholm AB (“KISAB”) is a silicon carbide semiconductor material development and production company with operations in the tech hub of Sweden just north of Stockholm: Kista.
SILICON CARBIDE
Why Wafer Quality Matters
In high-voltage power electric applications, substrate defects directly impact downstream yield and device performance.
Our 8-inch wafers are grown using our proprietary Fast Sublimation Growth Process (FSGP) method to eliminate Basal Plane Dislocations (BPD), preventing power device bipolar degradation while improving yield and performance.
TECHNICAL SPECIFICATIONS
SILICON CARBIDE
Pucks
Industry standard: Specification in line with customer demand,
- Diameter: 200 mm (8-inch)
- Thickness: 6.5 mm
- Type: N-type SiC
Quality Standard: High purity crystal including,
- BPD (Basal Plane Dislocations): <70/wafer
- MP (Micropipes): <2/wafer
- BSF (Bar-type Stacking Faults): None
- TSD (Threading Screw Dislocations): <100 cm-2
- TED (Threading Edge Dislocations): <800 cm-2
- EPD (Etch Pit Density): <1'000 cm-2
Please find the data sheet of our 8-inch n-type Silicon Carbide wafers below.
SILICON CARBIDE
Wafers
Industry standard: Specification in line with customer demand,
- Diameter: 200 mm (8-inch)
- Thickness: 350um
- Type: n-Type SiC
- Bow: <10 µm
- Warp: <25 µm
- TTV: <4 µm
Quality Standard: High purity crystal including,
- BPD (Basal Plane Dislocations): <70/wafer
- MP (Micropipes): <2/wafer
- BSF (Bar-type Stacking Faults): None
- TSD (Threading Screw Dislocations): <100 cm-2
- TED (Threading Edge Dislocations): <800 cm-2
- EPD (Etch Pit Density): <1'000 cm-2
Please find the data sheet of our 8-inch n-type Silicon Carbide wafers below
We have established a high volume production system capable of running 24/7, operated by the company’s highly qualified personnel.
The company’s proprietary process and related technologies are patented, and the production process has undergone an ISO-audit.