The Fast Sublimation Growth Process – Monocrystalline (FSGP-M) system was developed to meet the stringent requirements with respect to doping concentration control, planar defects and point defects of fluorescent SiC material.

FSGP-M distinguishes itself from Physical Vapor Transport (PVT) by:

• Step flow growth being the dominant growth mechanism during the whole growth session and over the whole substrate,
• Direct molecular transport (DMT) for supply of growth species,
• Growth at lower temperature.