OUR PRODUCT
Our substrates have:
Our substrates are practically free of basal plane dislocations, which enables device makers to avoid BIPOLAR DEGRADATION.
OUR SOLUTIONS
Kiselkarbid i Stockholm AB (“KISAB”) is a silicon carbide semiconductor material development and production company with operations in the tech hub of Sweden just north of Stockholm: Kista.
We are striving to be the most innovative provider of silicon carbide substrates, with the lowest defect densities, for use in power devices with the highest energy efficiency, highest power capability, lowest leakage current, and highest reliability on the market. It is our ambition to be the technology leader and we strive to define the future of the power electronics industry.
Please find out more about our products, and how we have solved the more prevalent issues that the industry faces here.
OUR TECHNOLOGY
Silicon carbide (SiC) is a next generation semiconductor material with the potential to revolutionize the power semiconductor industry, which is driven by fast growth in demand for energy-efficient high-performance power electronic systems.
In silicon carbide power devices applied in the power classes above 1.7 kV, BPDs, constricted to TEDs during the initial epitaxial growth phase may reconvert to BPDs and cause formation of SFs at high current stress, which sooner or later may cause devices to fail.
The Fast Sublimation Growth Process – Monocrystalline (FSGP-M) system was developed to meet the stringent requirements with respect to doping concentration control, stacking fault and point defect densities of florescent SiC material.
Kiselkarbid i Stockholm AB (“KISAB”) is a silicon carbide semiconductor material development and production company with operations in the tech hub of Sweden just north of Stockholm: Kista.
Kistagången 16, Box 228,
SE16440 Kista, SWEDEN