Stockholm September 12, 2022
Strongly driven by the electric vehicle market, the global silicon carbide SiC device market is growing with a compound annual growth rate of 34%. The SiC applications are still limited by poor quality of the underlying wafer materials. KISAB’s novel and innovative growth technology, emanating from the Linköping Technical University, enables growth of virtually defect free SiC wafers and promises to revolutionize the market for SiC devices.
Yole Développement, the most respected market analysis firm in the industry, estimates the SiC device market to be worth $6,3b in 2027 and has identified KISAB as the “innovative SiC growth technology”.
The €7.5m investment round was led by Fairpoint Capital with participation from existing investors, including Industrifonden, Ingka GreenTech and LPE.
Hadar Cars, Investment Director at Fairpoint Capital commented: “KISAB’s ability to cost-effectively grow defect free SiC wafers will be providing power component manufacturers with a drastically improved way to increase yield and build larger components at higher voltages. KISAB will also soon be able to ship defect free 8’’ SiC wafers which will further increase its competitiveness. We are very excited to be joining the company as it enters the very exciting commercialization phase”.
Per Anell, Senior Investment Director at Industrifonden added:” We invested in KISAB in 2018 because of the stellar research behind the technology. We are looking forward to continuing supporting KISAB in the next phase and welcome Fairpoint on that journey.”
Johan Ekman, CEO and founder of KISAB commented: “We are excited to welcome Fairpoint Capital as a new owner as KISAB enters its commercialization phase. We have recently started to sample our wafers to customers and will now be able to ramp up production to help our customers produce higher quality products at higher yields”.
For more information:
KISAB: Tim Palmroos +81 90 12808821
Fairpoint Capital: Hadar Cars +46 735 445845